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Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sato, Shinichiro; Sugaya, Takeyoshi*; Mochizuki, Toru*; Okano, Yoshinobu*; Oshima, Takeshi
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.73 - 76, 2015/11
The radiation effect on GaAs p-i-n solar cells with quantum dot (QD) in the i-layer was investigated. In a previous work, we particularly noted the degradation of fill-factor (FF) for the QD cells. In this work, to clarify the reason of the FF degradation in QD cells, generation current due to low-energy proton irradiation, which we call ion beam induced current (IBIC), was observed to characterize behavior of the generated minority carrier by the protons in the depletion region where QDs are located. The energy of protons was adjusted to damage the depletion region, and decrease of generation current was measured during the proton irradiation. The results suggest that the serious degradation of FF is caused by a decrease of the carrier collection efficiency in the depletion region due to proton damage.
Abderrahmane, A.*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*
IEEE Electron Device Letters, 35(11), p.1130 - 1132, 2014/11
Times Cited Count：10 Percentile：49.28(Engineering, Electrical & Electronic)The longitudinal and transverse magnetoresistances of AlGaN/GaN heterostructure-based micro-Hall sensors were compared with samples irradiated with protons with an energy of 380 keV and fluence of 10
(protons/cm
). Increases in the elastic and inelastic scattering were deduced from weak localization behavior in both samples. The AlGaN/GaN micro-Hall sensors showed stable magnetic sensitivity in non and irradiated samples and increased resistivity after proton irradiation yielded an enhanced magnetoresistance sensitivity in nonirradiated sensors from 160 to 417 V/(A 
T). The minimum detectable magnetic field of irradiated micro-Hall sensors determined from magneto-voltage measurements at 4 K was similar to the minimum detectable magnetic field in the nonirradiated sensors.
Hubbard, S.*; Sato, Shinichiro; Schmieder, K.*; Strong, W.*; Forbes, D.*; Bailey, C. G.*; Hoheisel, R.*; Walters, R. J.*
Proceedings of 40th IEEE Photovoltaic Specialists Conference (PVSC-40) (CD-ROM), p.1045 - 1050, 2014/06
Baseline and quantum dot (QD) GaAs pn-junction diodes were characterized by deep level transient spectroscopy before and after both 1MeV electron irradiation and 140 keV proton irradiation. Prior to irradiation, the addition of quantum dots appeared to have introduced a higher density of defects at EC-0.75 eV. After 1 MeV electron irradiation the well-known electron defects E3, E4 and E5 were observed in the baseline sample. In the quantum dot sample after 1 MeV electron irradiation, defects near E3, E4 and EC-0.75 eV were also observed. Compared to the irradiated baseline, the QD sample shows a higher density of more complex E4 defect and a lower density of the simple E3 defect, while the EC-0.75 eV defect seemed to be unaffected by electron irradiation. As well, after proton irradiation, well known proton defects PR1, PR2, PR4' are observed. The QD sample shows a lower density PR4' defects and a similar density of PR2 defects, when compared to the proton irradiated baseline sample.
Maximenko, S.*; Lumb, M.*; Hoheisel, R.*; Gonz
lez, M.*; Scheiman, D.*; Messenger, S.*; Tibbits, T. N. D.*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; et al.
Proceedings of 40th IEEE Photovoltaic Specialists Conference (PVSC-40) (CD-ROM), p.2144 - 2148, 2014/06
In this paper, a complex analysis of the radiation response of GaAs solar cells with multi quantum wells (MQW) incorporated in the i-region of the device is presented. Electronic transport properties of the MQW i-region were assessed experimentally by the electron beam induced current (EBIC) technique. A 2-D EBIC diffusion model was applied to simulate EBIC line scans across device structure for different radiation doses. The results are interpreted using numerical modeling of the electrical field distribution at different radiation levels. Type conversion from n- to p-type was found in MQW i-region at displacement damage dose as low as low as 1
MeV MeV/g. This is supported by experimental and simulated EBIC and electric field distribution results.
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Ito, Hisayoshi
Journal of Applied Physics, 98(1), p.013530_1 - 013530_14, 2005/07
Times Cited Count：45 Percentile：80.59(Physics, Applied)no abstracts in English
*
Oyo Butsuri, 61(7), p.722 - 725, 1992/00
no abstracts in English
; Takehisa, Masaaki
Shokuhin Shosha, 17, p.28 - 31, 1982/00
no abstracts in English
;
Nihon Kagakkai-Shi, 1975(2), p.228 - 233, 1975/02
no abstracts in English
Kanari, Yukiko; Kaminaga, Kiichi; Sakamoto, Yuka; Narita, Ayumi; Noguchi, Miho; Usami, Noriko*; Kobayashi, Katsumi*; Suzuki, Keiji*; Yokoya, Akinari; Fujii, Kentaro
no journal, ,
no abstracts in English
Tamura, Koji*; Nakanishi, Ryuzo*; Oba, Hironori; Wakaida, Ikuo
no journal, ,
